ECH8654-TL-H
MFR #ECH8654-TL-H
FPN#ECH8654-TL-H-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 5A I(D), 20V, 0.038ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | ECH8654 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.8V, 4.5V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | 10V |
| Input Capacitance | 960pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 5A (Ta) |
| Maximum Drain to Source Resistance | 38 mOhm @ 3A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Power Dissipation | 1.3W (Ta) |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 11nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | N/A |
| Package Type | SOT-28FL/ECH8 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.8nC |
| Typical Gate to Source Charge | 2nC |