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onsemi

ECH8310-TL-H

MFR #ECH8310-TL-H

FPN#ECH8310-TL-H-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount, 8-SMD
Datasheet
43498-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameECH8310
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1400pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current9A (Ta)
Maximum Drain to Source Resistance17 mOhm @ 4.5A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
Maximum Pulse Drain Current60A
Maximum Total Gate Charge28nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package TypeSOT-28FL/ECH8
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6nC
Typical Gate to Source Charge4nC