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ECH8309-TL-H

MFR #ECH8309-TL-H

FPN#ECH8309-TL-H-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 12V 9.5A (Ta) 1.5W (Ta) Surface Mount, 8-SMD
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameECH8309
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage12V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±10V
Input Capacitance1780pF
Input Capacitance Test Voltage6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9.5A (Ta)
Maximum Drain to Source Resistance16 mOhm @ 4.5A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeSOT-28FL/ECH8
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.9nC
Typical Gate to Source Charge2.8nC