
ECH8309-TL-H
MFR #ECH8309-TL-H
FPN#ECH8309-TL-H-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 12V 9.5A (Ta) 1.5W (Ta) Surface Mount, 8-SMD
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | ECH8309 |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 12V |
Drive Voltage | 1.8V, 4.5V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±10V |
Input Capacitance | 1780pF |
Input Capacitance Test Voltage | 6V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 9.5A (Ta) |
Maximum Drain to Source Resistance | 16 mOhm @ 4.5A, 4.5V |
Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.5W (Ta) |
Maximum Pulse Drain Current | 40A |
Maximum Total Gate Charge | 18nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | N/A |
Package Type | SOT-28FL/ECH8 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 4.9nC |
Typical Gate to Source Charge | 2.8nC |