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DTC123EM3T5G
onsemi

DTC123EM3T5G

MFR #DTC123EM3T5G

FPN#DTC123EM3T5G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN Pre-Biased 50V 100mA 600mW Surface Mount, SOT-723-3
Datasheet
97502-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameDTC123EM3T5G
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R12.2 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R22.2 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base VoltageN/A
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 5mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation600mW
Minimum DC Current Gain8 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-723
Resistor Ratio R1 R21
Technology TypeN/A
Transistor TypeSingle