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CPH5871-TL-W
onsemi

CPH5871-TL-W

MFR #CPH5871-TL-W

FPN#CPH5871-TL-W-FL

MFRonsemi

Part DescriptionSingle N-Channel Power MOSFET with Schottky Diode 30V, 3.5A, 52m
Datasheet
40791-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameCPH5871
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage1.8V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance430pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.5A (Ta)
Maximum Drain to Source Resistance52 mOhm @ 2A, 4.5V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature125°C (TJ)
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain Current14A
Maximum Total Gate Charge4.7nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type5-CPH
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.1nC
Typical Gate to Source Charge800pC