
CPH3417-TL-E
MFR #CPH3417-TL-E
FPN#CPH3417-TL-E-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 20V 1.8A (Ta) SC-96
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | CPH3417 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 20V | 
| Drive Voltage | 1.8V, 4V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±10V | 
| Input Capacitance | 100pF | 
| Input Capacitance Test Voltage | 10V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 1.8A (Ta) | 
| Maximum Drain to Source Resistance | 210 mOhm @ 1A, 4V | 
| Maximum Gate to Source Threshold Voltage | 1.3V @ 1mA | 
| Maximum Junction Temperature | 150°C | 
| Maximum Operating Temperature | 150°C | 
| Maximum Power Dissipation | 900mW (Ta) | 
| Maximum Pulse Drain Current | 7.2A | 
| Maximum Total Gate Charge | 4.5nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | N/A | 
| Minimum Operating Temperature | N/A | 
| Package Type | 3-CPH | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 400nC | 
| Typical Gate to Source Charge | 400nC | 
