
onsemi
BUT11ATU
MFR #BUT11ATU
FPN#BUT11ATU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 450 V 5 A 100 W Through Hole TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BUT11A |
| Packaging Type | Tube |
| Packaging Quantity | 1000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-220-3 |
| Configuration | NPN |
| Gain Bandwidth | N/A |
| Maximum Collector Current | 5A |
| Maximum Collector Emitter Breakdown Voltage | 450V |
| Maximum Collector Emitter Saturation Voltage | 1.5V @ 500mA, 2.5A |
| Maximum Cutoff Collector Current | 1mA |
| Maximum DC Current Gain | N/A |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 100W |
| Minimum DC Current Gain | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Technology Type | SI |
| Transistor Type | Single |
