
BUL45D2G
MFR #BUL45D2G
FPN#BUL45D2G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 400 V 5 A 13MHz 75 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | BUL45D2G |
Packaging Type | Tube |
Packaging Quantity | 50 |
Lifecycle Status | Last Time Buy |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN |
Gain Bandwidth | 13MHz |
Life Cycle Status | Last Time Buy |
Maximum Collector Current | 5A |
Maximum Collector Emitter Breakdown Voltage | 400V |
Maximum Collector Emitter Saturation Voltage | 500mV @ 400mA, 2A |
Maximum Cutoff Collector Current | 100µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 75W |
Minimum DC Current Gain | 22 @ 800mA, 1V |
Minimum Operating Temperature | -65°C (TJ) |
Package Type | TO-220-3 |
Technology Type | SI |
Transistor Type | Single |