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BU406G
onsemi

BU406G

MFR #BU406G

FPN#BU406G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 200 V 7 A 10MHz 60 W Through Hole TO-220-3
Datasheet
119811-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBU406
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth10MHz
Life Cycle StatusActive
Maximum Collector Current7A
Maximum Collector Emitter Breakdown Voltage200V
Maximum Collector Emitter Saturation Voltage1V @ 500mA, 5A
Maximum Cutoff Collector Current5mA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation60W
Minimum DC Current GainN/A
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle