(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
BSV52LT1G
onsemi

BSV52LT1G

MFR #BSV52LT1G

FPN#BSV52LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 12V 100mA 400MHz 225mW Surface Mount, TO-236-3
Datasheet
150158-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSV52LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth400MHz
Life Cycle StatusActive
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage12V
Maximum Collector Emitter Saturation Voltage400mV @ 5mA, 50mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain40 @ 10mA, 1V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle