(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
Infineon

BSP170PH6327XTSA1

MFR #BSP170PH6327XTSA1

FPN#BSP170PH6327XTSA1-FL

MFRInfineon

Part DescriptionMOSFET P-Channel Single 60V 1.9A (Ta), SOT223

Legacy ManufacturerCypress Semiconductor

Datasheet
40006-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSP170P
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance410pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current1.9A (Ta)
Maximum Drain to Source Resistance300 mOhm @ 1.9A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.8W (Ta)
Maximum Pulse Drain Current7.6A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 66% from Suppliers use this Dimension
Package TypePG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.9nC
Typical Gate to Source Charge1.4nC