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BS170
MFR #BS170
FPN#BS170-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 500mA Through Hole, TO-226-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | BS170 | 
| Packaging Type | Bag | 
| Packaging Quantity | 10000 | 
| Lifecycle Status | Active | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 60V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 60pF | 
| Input Capacitance Test Voltage | 10V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 500mA | 
| Maximum Drain to Source Resistance | 5 Ohm @ 200mA, 10V | 
| Maximum Gate to Source Threshold Voltage | 3V @ 1mA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 350mW (Ta) | 
| Maximum Pulse Drain Current | N/A | 
| Maximum Total Gate Charge | N/A | 
| Maximum Total Gate Charge Test Voltage | N/A | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-92 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | N/A | 
| Typical Gate to Source Charge | N/A | 
