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BLP27M810Z
Flip Electronics Manufacturing Services

BLP27M810Z

MFR #BLP27M810Z

FPN#BLP27M810Z-FL

MFRFlip Electronics Manufacturing Services

Part DescriptionRF MOSFET LDMOS 65V 2.7GHz 120mA 16-SON T/R

Legacy ManufacturerAmpleon

Datasheet
39958-Datasheet
Quote Onlymore info
MOQ: 500more info
Multiples of: 500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBLP27M810
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
1dB Compression Point (P1dB)10W
3dB Compression Point (P3dB)N/A
Channel ModeEnhancement
Configuration2 N-Channel (Dual) Common Source
Gain17dB
Gate to Source Voltage+13V, -500mV
Life Cycle StatusActive
Maximum Continuous Drain Current1.4µA
Maximum Junction Temperature225°C
Maximum Operating Frequency2.7GHz
Maximum Operating TemperatureN/A
Maximum Output PowerN/A
Minimum Junction TemperatureN/A
Minimum Operating FrequencyN/A
Minimum Operating TemperatureN/A
Noise FigureN/A
Noise Test Current120mA
Noise Test Voltage28V
Number of Element per Chip2
Package Type16-HVSON (4x6)
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power10W
Voltage Rating65V