
BFU520Y
MFR #BFU520Y
FPN#BFU520Y-FL
MFRNXP
Part DescriptionDual-NPN Wideband Silicon RF Transistor
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | BFU520Y |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Last Time Buy |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
1dB Compression Point (P1dB) | 8.5dBm |
Configuration | 2 NPN |
Gain | 14dB |
Gain Bandwidth | 10GHz |
Life Cycle Status | Last Time Buy |
Maximum Collector Base Voltage | 24V |
Maximum Collector Current | 30mA |
Maximum Collector Emitter Breakdown Voltage | 12V |
Maximum Emitter Base Voltage | 3V |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 450mW |
Minimum DC Current Gain | 60 @ 5mA, 8V |
Minimum Junction Temperature | -40°C (TJ) |
Noise Figure | 0.9dB to 1dB @ 433MHz to 1.8GHz |
Number of Elements | 2 |
Output Intercept Point (IP3) | 18dBm |
Output Power | N/A |
Package Type | 6-TSSOP |
Technology Type | SI |
Transistor Type | Array |