
NXP
BFU520Y
MFR #BFU520Y
FPN#BFU520Y-FL
MFRNXP
Part DescriptionDual-NPN Wideband Silicon RF Transistor
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BFU520Y |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Last Time Buy |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| 1dB Compression Point (P1dB) | 8.5dBm |
| Configuration | 2 NPN |
| Gain | 14dB |
| Gain Bandwidth | 10GHz |
| Life Cycle Status | Last Time Buy |
| Maximum Collector Base Voltage | 24V |
| Maximum Collector Current | 30mA |
| Maximum Collector Emitter Breakdown Voltage | 12V |
| Maximum Emitter Base Voltage | 3V |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 450mW |
| Minimum DC Current Gain | 60 @ 5mA, 8V |
| Minimum Junction Temperature | -40°C (TJ) |
| Minimum Operating Temperature | N/A |
| Noise Figure | 0.9dB to 1dB @ 433MHz to 1.8GHz |
| Number of Elements | 2 |
| Output Intercept Point (IP3) | 18dBm |
| Output Power | N/A |
| Package Type | 6-TSSOP |
| Technology Type | SI |
| Transistor Type | Array |
