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BDW93C
onsemi

BDW93C

MFR #BDW93C

FPN#BDW93C-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 12 A 80 W Through Hole TO-220-3
Datasheet
39904-Datasheet
Quote Onlymore info
Multiples of: 1200more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBDW93C
Packaging TypeBag
Packaging Quantity1200
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage100V
Maximum Collector Current12A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage3V @ 100mA, 10A
Maximum Cutoff Collector Current1mA
Maximum Emitter Base VoltageN/A
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation80W
Minimum DC Current Gain1000 @ 3A, 3V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle