(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
BDW47G
onsemi

BDW47G

MFR #BDW47G

FPN#BDW47G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 100V 15A 4MHz 85W Through Hole, TO-220-3
Datasheet
39903-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBDW47G
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP - Darlington
Gain Bandwidth4MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage100V
Maximum Collector Current15A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage3V @ 50mA, 10A
Maximum Cutoff Collector Current2mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation85W
Minimum DC Current Gain1000 @ 5A, 4V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle