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BDW42G
onsemi

BDW42G

MFR #BDW42G

FPN#BDW42G-FL

MFRonsemi

Part DescriptionDarlington Bipolar (BJT) Transistor NPN 100V 15A 4MHz 85W Through Hole, TO-220-3
Datasheet
39902-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBDW42G
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain Bandwidth4MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage100V
Maximum Collector Current15A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage3V @ 50mA, 10A
Maximum Cutoff Collector Current2mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation85W
Minimum DC Current Gain1000 @ 5A, 4V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle