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BDV65BG
onsemi

BDV65BG

MFR #BDV65BG

FPN#BDV65BG-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 10 A 125 W Through Hole TO-247-3
Datasheet
39901-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBDV65B
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage100V
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage2V @ 20mA, 5A
Maximum Cutoff Collector Current2mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation125W
Minimum DC Current Gain1000 @ 5A, 4V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-247
Technology TypeSI
Transistor TypeSingle