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BDV64BG
onsemi

BDV64BG

MFR #BDV64BG

FPN#BDV64BG-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 100 V 10 A 125 W Through Hole TO-247-3
Datasheet
39900-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBDV64B
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
ConfigurationPNP - Darlington
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage100V
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage2V @ 20mA, 5A
Maximum Cutoff Collector Current1mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation125W
Minimum DC Current Gain1000 @ 5A, 4V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-247
Technology TypeSI
Transistor TypeSingle