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BD682S
onsemi

BD682S

MFR #BD682S

FPN#BD682S-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP - Darlington 100 V 4 A 14 W Through Hole TO-126-3
Datasheet
39892-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD682
Packaging TypeBag
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP - Darlington
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage100V
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage2.5V @ 30mA, 1.5A
Maximum Cutoff Collector Current500µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation14W
Minimum DC Current Gain750 @ 1.5A, 3V
Minimum Operating TemperatureN/A
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle