
BD436S
MFR #BD436S
FPN#BD436S-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 32V 4A 3MHz 36W Through Hole, TO-126-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BD436 |
| Packaging Type | Bag |
| Packaging Quantity | 2000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | PNP |
| Gain Bandwidth | 3MHz |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 4A |
| Maximum Collector Emitter Breakdown Voltage | 32V |
| Maximum Collector Emitter Saturation Voltage | 500mV @ 200mA, 2A |
| Maximum Cutoff Collector Current | 100µA |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 36W |
| Minimum DC Current Gain | 50 @ 2A, 1V |
| Minimum Operating Temperature | N/A |
| Package Type | TO-126-3 |
| Technology Type | N/A |
| Transistor Type | Single |
