(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
BD239C
onsemi

BD239C

MFR #BD239C

FPN#BD239C-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 100V 2A 30W Through Hole, TO-220-3
Datasheet
39861-Datasheet
Quote Onlymore info
Multiples of: 1200more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD239C
Packaging TypeBag
Packaging Quantity1200
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusLast Time Buy
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage700mV @ 200mA, 1A
Maximum Cutoff Collector Current300µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation30W
Minimum DC Current Gain15 @ 1A, 4V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle