
BD14016S
MFR #BD14016S
FPN#BD14016S-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 80 V 1.5 A 1.25 W Through Hole TO-126-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | BD140 | 
| Packaging Type | Bag | 
| Packaging Quantity | 2000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Configuration | PNP | 
| Gain Bandwidth | N/A | 
| Life Cycle Status | Obsolete | 
| Maximum Collector Current | 1.5A | 
| Maximum Collector Emitter Breakdown Voltage | 80V | 
| Maximum Collector Emitter Saturation Voltage | 500mV @ 50mA, 500mA | 
| Maximum Cutoff Collector Current | 100nA (ICBO) | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 1.25W | 
| Minimum DC Current Gain | 100 @ 5mA, 2V | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-126-3 | 
| Technology Type | SI | 
| Transistor Type | Single | 
