
BD14016S
MFR #BD14016S
FPN#BD14016S-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 80 V 1.5 A 1.25 W Through Hole TO-126-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | BD140 |
Packaging Type | Bag |
Packaging Quantity | 2000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Configuration | PNP |
Gain Bandwidth | N/A |
Life Cycle Status | Obsolete |
Maximum Collector Current | 1.5A |
Maximum Collector Emitter Breakdown Voltage | 80V |
Maximum Collector Emitter Saturation Voltage | 500mV @ 50mA, 500mA |
Maximum Cutoff Collector Current | 100nA (ICBO) |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.25W |
Minimum DC Current Gain | 100 @ 150mA, 2V |
Minimum Operating Temperature | N/A |
Package Type | TO-126-3 |
Technology Type | SI |
Transistor Type | Single |