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BD138G
onsemi

BD138G

MFR #BD138G

FPN#BD138G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Through Hole TO-126
Datasheet
39851-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD138G
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current1.5A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage500mV @ 50mA, 500mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.25W
Minimum DC Current Gain40 @ 150mA, 2V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle