(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
BD138G
onsemi

BD138G

MFR #BD138G

FPN#BD138G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Through Hole TO-126
Datasheet
39851-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBD138G
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current1.5A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage500mV @ 50mA, 500mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.25W
Minimum DC Current Gain40 @ 150mA, 2V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle