
BD13710STU
MFR #BD13710STU
FPN#BD13710STU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 60 V 1.5 A 1.25 W Through Hole TO-126-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BD137 |
| Packaging Type | Tube |
| Packaging Quantity | 1920 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | NPN |
| Gain Bandwidth | N/A |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 1.5A |
| Maximum Collector Emitter Breakdown Voltage | 60V |
| Maximum Collector Emitter Saturation Voltage | 500mV @ 50mA, 500mA |
| Maximum Cutoff Collector Current | 100nA (ICBO) |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.25W |
| Minimum DC Current Gain | 63 @ 150mA, 2V |
| Minimum Operating Temperature | N/A |
| Package Type | TO-126-3 |
| Technology Type | SI |
| Transistor Type | Single |
