onsemi
BD13610S
MFR #BD13610S
FPN#BD13610S-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 45V 1.5A 1.25W Through Hole, TO-126-3
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BD136 |
| Packaging Type | Bag |
| Packaging Quantity | 2000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-126-3 |
| Configuration | PNP |
| Gain Bandwidth | N/A |
| Maximum Collector Current | 1.5A |
| Maximum Collector Emitter Breakdown Voltage | 45V |
| Maximum Collector Emitter Saturation Voltage | 500mV @ 50mA, 500mA |
| Maximum Cutoff Collector Current | 100nA (ICBO) |
| Maximum DC Current Gain | 250 @ 150mA, 2V |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 1.25W |
| Minimum DC Current Gain | 40 @ 150mA, 2V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Technology Type | SI |
| Transistor Type | Single |