
BD13610S
MFR #BD13610S
FPN#BD13610S-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 45V 1.5A 1.25W Through Hole, TO-126-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | BD136 | 
| Packaging Type | Bag | 
| Packaging Quantity | 2000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Configuration | PNP | 
| Gain Bandwidth | N/A | 
| Life Cycle Status | Obsolete | 
| Maximum Collector Current | 1.5A | 
| Maximum Collector Emitter Breakdown Voltage | 45V | 
| Maximum Collector Emitter Saturation Voltage | 500mV @ 50mA, 500mA | 
| Maximum Cutoff Collector Current | 100nA (ICBO) | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 1.25W | 
| Minimum DC Current Gain | 63 @ 5mA, 2V | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-126-3 | 
| Technology Type | SI | 
| Transistor Type | Single | 
