loading content
BC846BWT1G

BC846BWT1G

MFR #BC846BWT1G

FPN#BC846BWT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 65V 100mA 100MHz 150mW Surface Mount, SOT-323-3
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBC846BWT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth100MHz
Life Cycle StatusActive
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage65V
Maximum Collector Emitter Saturation Voltage600mV @ 5mA, 100mA
Maximum Cutoff Collector Current15nA (ICBO)
Maximum Emitter Base Voltage6V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation200mW
Minimum DC Current Gain200 @ 2mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSC-70 (SOT323)
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle