onsemi
ATP301-TL-H
MFR #ATP301-TL-H
FPN#ATP301-TL-H-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 28A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | ATP301 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4000pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 28A (Ta) |
| Maximum Drain to Source Resistance | 75 mOhm @ 14A, 10V |
| Maximum Gate to Source Threshold Voltage | 3.5V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 70W (Tc) |
| Maximum Pulse Drain Current | 112A |
| Maximum Total Gate Charge | 73nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | DPAK/ATPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 14nC |
| Typical Gate to Source Charge | 16nC |