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onsemi

ATP113-TL-H

MFR #ATP113-TL-H

FPN#ATP113-TL-H-FL

MFRonsemi

Part DescriptionP-Channel 60 V 35A (Ta) 50W (Tc) Surface Mount ATPAK
Datasheet
39284-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameATP113
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2400pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current35A (Ta)
Maximum Drain to Source Resistance29.5 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C
Maximum Operating Temperature150°C
Maximum Power Dissipation50W (Tc)
Maximum Pulse Drain Current105A
Maximum Total Gate Charge55nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeATPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12nC
Typical Gate to Source Charge7.5nC