
ATP113-TL-H
MFR #ATP113-TL-H
FPN#ATP113-TL-H-FL
MFRonsemi
Part DescriptionP-Channel 60 V 35A (Ta) 50W (Tc) Surface Mount ATPAK
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | ATP113 |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 4V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 2400pF |
Input Capacitance Test Voltage | 20V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 35A (Ta) |
Maximum Drain to Source Resistance | 29.5 mOhm @ 18A, 10V |
Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
Maximum Junction Temperature | 150°C |
Maximum Power Dissipation | 50W (Tc) |
Maximum Pulse Drain Current | 105A |
Maximum Total Gate Charge | 55nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | N/A |
Package Type | ATPAK |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 12nC |
Typical Gate to Source Charge | 7.5nC |