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onsemi

ATP112-TL-H

MFR #ATP112-TL-H

FPN#ATP112-TL-H-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 25A (Ta) 40W (Tc) Surface Mount, ATPAK-3
Datasheet
39283-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameATP112
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1450pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current25A (Ta)
Maximum Drain to Source Resistance43 mOhm @ 13A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C
Maximum Operating Temperature150°C
Maximum Power Dissipation40W (Tc)
Maximum Pulse Drain Current75A
Maximum Total Gate Charge33.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeATPAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.9nC
Typical Gate to Source Charge5.3nC