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AFT26HW050SR3

MFR #AFT26HW050SR3

FPN#AFT26HW050SR3-FL

MFRNXP

Part DescriptionAirfast RF Power LDMOS Transistor, 2496-2690 MHz, 9 W Avg., 28 V.
Quote Onlymore info
Multiples of: 250more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFT26HW050SR3
Packaging TypeTape and Reel
Packaging Quantity250
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
1dB Compression Point (P1dB)45.9dBm
3dB Compression Point (P3dB)46.6dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain14.2dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency2.69GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency2.496GHz
Noise FigureN/A
Noise Test Current100mA
Noise Test Voltage28V
Number of Element per Chip2
Package TypeNI-780-4S4
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power9W
Voltage Rating65V