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NXP

AFT26HW050SR3

MFR #AFT26HW050SR3

FPN#AFT26HW050SR3-FL

MFRNXP

Part DescriptionAirfast RF Power LDMOS Transistor, 2496-2690 MHz, 9 W Avg., 28 V.
Datasheet
38753-Datasheet
Quote Onlymore info
Multiples of: 250more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFT26HW050SR3
Packaging TypeTape and Reel
Packaging Quantity250
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
1dB Compression Point (P1dB)45.9dBm
3dB Compression Point (P3dB)46.6dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain14.2dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency2.69GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency2.496GHz
Noise FigureN/A
Noise Test Current100mA
Noise Test Voltage28V
Number of Element per Chip2
Package TypeNI-780-4S4
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power9W
Voltage Rating65V