AFT18P350-4S2LR6
MFR #AFT18P350-4S2LR6
FPN#AFT18P350-4S2LR6-FL
MFRNXP
Part DescriptionAirfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | AFT18P350-4S2LR6 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 150 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| 1dB Compression Point (P1dB) | 55dBm |
| 3dB Compression Point (P3dB) | 56dBm |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Gain | 16.1dB |
| Gate to Source Voltage | +10V, -6V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 1A |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 1.88GHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | -40°C |
| Minimum Operating Frequency | 1.81GHz |
| Noise Figure | N/A |
| Noise Test Current | 1A |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 2 |
| Package Type | NI-1230-4LS2L |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 55dBm |
| Voltage Rating | 65V |