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NXP

AFT18H357-24NR6

MFR #AFT18H357-24NR6

FPN#AFT18H357-24NR6-FL

MFRNXP

Part DescriptionIC TRANS RF LDMOS
Datasheet
38747-Datasheet
Quote Onlymore info
Multiples of: 150more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFT18H357-24NR6
Packaging TypeTape and Reel
Packaging Quantity150
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
1dB Compression Point (P1dB)53dBm
3dB Compression Point (P3dB)55dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain17.5dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency1.88GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency1.81GHz
Noise FigureN/A
Noise Test Current800mA
Noise Test Voltage28V
Number of Element per Chip2
Package TypeOM-1230-4L2L
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power53dBm
Voltage Rating65V