(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NXP

AFT09H310-04GSR6

MFR #AFT09H310-04GSR6

FPN#AFT09H310-04GSR6-FL

MFRNXP

Part DescriptionAirfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V.
Datasheet
38745-Datasheet
Quote Onlymore info
Multiples of: 150more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFT09H310-04GSR6
Packaging TypeTape and Reel
Packaging Quantity150
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
1dB Compression Point (P1dB)52.6dBm
3dB Compression Point (P3dB)55.9dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain17.9dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain CurrentN/A
Maximum Junction Temperature225°C
Maximum Operating Frequency920MHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency920MHz
Noise FigureN/A
Noise Test Current680mA
Noise Test Voltage28V
Number of Element per Chip2
Package TypeNI-1230-4S GULL
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power52dBm
Voltage Rating70V