AFGY160T65SPD-B4
MFR #AFGY160T65SPD-B4
FPN#AFGY160T65SPD-B4-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 650 V 240 A 882 W Through Hole TO-247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | AFGY160T65SPD-B4 |
| Packaging Type | Tube |
| Packaging Quantity | 30 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 245nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Life Cycle Status | Active |
| Maximum Collector Current | 240A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2.05V @ 15V, 160A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 882W (Tc) |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247-3 |
| Pulsed Collector Current | 480A |
| Reverse Recovery Time | 132ns |
| Switching Off Delay Time | 98ns |
| Switching Off Energy | 5.7mJ |
| Switching On Delay Time | 53ns |
| Switching On Energy | 12.4mJ |
| Technology Type | N/A |