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AFGHL50T65SQDC

AFGHL50T65SQDC

MFR #AFGHL50T65SQDC

FPN#AFGHL50T65SQDC-FL

MFRonsemi

Part DescriptionIGBT-Single 650V 100A 268W, TO247-3
Quote Onlymore info
Multiples of: 450more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFGHL50T65SQDC
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge94nC
IGBT TypeField Stop
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current100A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage2.1V @ 15V, 50A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation268W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-3
Pulsed Collector Current200A
Reverse Recovery TimeN/A
Switching Delay Time17.6ns/94.4ns
Switching Energy131µJ (on), 96µJ (off)
Technology TypeSIC
Test Condition400V, 12.5A, 4.7 Ohm, 15V