
AFGHL50T65SQDC
MFR #AFGHL50T65SQDC
FPN#AFGHL50T65SQDC-FL
MFRonsemi
Part DescriptionIGBT-Single 650V 100A 268W, TO247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | AFGHL50T65SQDC | 
| Packaging Type | Tube | 
| Packaging Quantity | 450 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Configuration | Single | 
| Gate Charge | 94nC | 
| IGBT Type | Field Stop | 
| Input Type | Standard | 
| Life Cycle Status | Active | 
| Maximum Collector Current | 100A | 
| Maximum Collector Emitter Breakdown Voltage | 650V | 
| Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 50A | 
| Maximum Gate Emitter Voltage | ±20V | 
| Maximum Junction Temperature | 175°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 268W | 
| Maximum Switching Frequency | N/A | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Minimum Switching Frequency | N/A | 
| Package Type | TO-247-3 | 
| Pulsed Collector Current | 200A | 
| Reverse Recovery Time | N/A | 
| Switching Off Delay Time | 94.4ns | 
| Switching Off Energy | 96µJ | 
| Switching On Delay Time | 17.6ns | 
| Switching On Energy | 131µJ | 
| Technology Type | SIC | 
