
AFGHL50T65SQDC
MFR #AFGHL50T65SQDC
FPN#AFGHL50T65SQDC-FL
MFRonsemi
Part DescriptionIGBT-Single 650V 100A 268W, TO247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | AFGHL50T65SQDC |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 94nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Life Cycle Status | Active |
| Maximum Collector Current | 100A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 50A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 268W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247-3 |
| Pulsed Collector Current | 200A |
| Reverse Recovery Time | N/A |
| Switching Off Delay Time | 94.4ns |
| Switching Off Energy | 96µJ |
| Switching On Delay Time | 17.6ns |
| Switching On Energy | 131µJ |
| Technology Type | SIC |
