AFGHL50T65SQDC
MFR #AFGHL50T65SQDC
FPN#AFGHL50T65SQDC-FL
MFRonsemi
Part DescriptionIGBT-Single 650V 100A 268W, TO247-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | AFGHL50T65SQDC |
Packaging Type | Tube |
Packaging Quantity | 450 |
Lifecycle Status | Active |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 94nC |
IGBT Type | Field Stop |
Input Type | Standard |
Life Cycle Status | Active |
Maximum Collector Current | 100A |
Maximum Collector Emitter Breakdown Voltage | 650V |
Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 50A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 268W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-247-3 |
Pulsed Collector Current | 200A |
Reverse Recovery Time | N/A |
Switching Delay Time | 17.6ns/94.4ns |
Switching Energy | 131µJ (on), 96µJ (off) |
Technology Type | SIC |
Test Condition | 400V, 12.5A, 4.7 Ohm, 15V |