
AFGHL50T65SQD
MFR #AFGHL50T65SQD
FPN#AFGHL50T65SQD-FL
MFRonsemi
Part DescriptionIGBT-Single 650V 80A 268W TO247-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | AFGHL50T65SQD |
Packaging Type | Tube |
Packaging Quantity | 450 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 102nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Life Cycle Status | Active |
Maximum Collector Current | 80A |
Maximum Collector Emitter Breakdown Voltage | 650V |
Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 50A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 268W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-247-3 |
Pulsed Collector Current | 200A |
Reverse Recovery Time | N/A |
Switching Off Delay Time | 81ns |
Switching Off Energy | 460µJ |
Switching On Delay Time | 20ns |
Switching On Energy | 950µJ |
Technology Type | N/A |