
AFGHL30T65RQDN
MFR #AFGHL30T65RQDN
FPN#AFGHL30T65RQDN-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 600V 20.6A (Tj) TO-220-3 Tube
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | AFGHL30T65RQDN |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 37nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Life Cycle Status | Active |
| Maximum Collector Current | 42A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 1.82V @ 15V, 30A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 230.8W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247-3 |
| Pulsed Collector Current | 120A |
| Reverse Recovery Time | 39ns |
| Switching Off Delay Time | 68ns |
| Switching Off Energy | 320µJ |
| Switching On Delay Time | 18ns |
| Switching On Energy | 340µJ |
| Technology Type | N/A |
