AFGHL30T65RQDN
MFR #AFGHL30T65RQDN
FPN#AFGHL30T65RQDN-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 600V 20.6A (Tj) TO-220-3 Tube
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | AFGHL30T65RQDN |
Packaging Type | Tube |
Packaging Quantity | 450 |
Lifecycle Status | Active |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 37nC |
IGBT Type | Field Stop |
Input Type | Standard |
Life Cycle Status | Active |
Maximum Collector Current | 42A |
Maximum Collector Emitter Breakdown Voltage | 650V |
Maximum Collector Emitter Saturation Voltage | 1.82V @ 15V, 30A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 230.8W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-247-3 |
Pulsed Collector Current | 120A |
Reverse Recovery Time | 39ns |
Switching Delay Time | 18ns/68ns |
Switching Energy | 340µJ (on), 320µJ (off) |
Technology Type | N/A |
Test Condition | 400V, 15A, 2.5 Ohm, 15V |