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NXP

A2G22S160-01SR3

MFR #A2G22S160-01SR3

FPN#A2G22S160-01SR3-FL

MFRNXP

Part DescriptionAirfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V, CFM2FG
Datasheet
38179-Datasheet
Quote Onlymore info
Multiples of: 250more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA2G22S160-01SR3
Packaging TypeTape and Reel
Packaging Quantity250
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
1dB Compression Point (P1dB)50.4dBm
ConfigurationPNP
Gain19.6dB
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base VoltageN/A
Maximum Collector CurrentN/A
Maximum Collector Emitter Breakdown VoltageN/A
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature225°C (TJ)
Maximum Operating Temperature150°C (TC)
Maximum Power DissipationN/A
Minimum DC Current GainN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Operating Temperature-55°C (TC)
Noise FigureN/A
Number of Elements1
Output Intercept Point (IP3)51.8dBm
Output Power32W
Package TypeNI-400S-240
Technology TypeN/A
Transistor TypeSingle