3LP01M-TL-H
MFR #3LP01M-TL-H
FPN#3LP01M-TL-H-FL
MFRonsemi
Part DescriptionP-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount MCP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 3LP01M |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 1.5V, 4V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±10V |
| Input Capacitance | 7.5pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 100mA (Ta) |
| Maximum Drain to Source Resistance | 10.4 Ohm @ 50mA, 4V |
| Maximum Gate to Source Threshold Voltage | 1.4V @ 100µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 150mW (Ta) |
| Maximum Pulse Drain Current | 400mA |
| Maximum Total Gate Charge | 1.43nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | MCP |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 250pC |
| Typical Gate to Source Charge | 180pC |