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onsemi

3LN01M-TL-E

MFR #3LN01M-TL-E

FPN#3LN01M-TL-E-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 150mA (Ta) SOT-323 T/R
Datasheet
99556-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name3LN01M
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage1.5V, 4V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±10V
Input Capacitance7pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current150mA (Ta)
Maximum Drain to Source Resistance3.7 Ohm @ 80mA, 4V
Maximum Gate to Source Threshold Voltage1.3V @ 100µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation150mW (Ta)
Maximum Pulse Drain Current600mA
Maximum Total Gate Charge1.58nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package Type3-MCP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge310pC
Typical Gate to Source Charge260pC