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2V7002KT1G
MFR #2V7002KT1G
FPN#2V7002KT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 320mA (Ta) SOT-23-3 T/R
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2V7002K |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 45pF |
Input Capacitance Test Voltage | 20V |
Junction to Case Thermal Resistance | N/A |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 320mA (Ta) |
Maximum Drain to Source Resistance | 1.6 Ohm @ 500mA, 10V |
Maximum Gate to Source Threshold Voltage | 2.3V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 300mW (Tj) |
Maximum Pulse Drain Current | 5A |
Maximum Total Gate Charge | 700pC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | SOT-23-3 (TO-236) |
Single Pulse Avalanche Energy | N/A |
Technology | MOSFET (Metal Oxide) |
Technology Type | N/A |
Typical Gate to Drain Charge | 100pC |
Typical Gate to Source Charge | 300pC |