2SK3666-3-TB-E
MFR #2SK3666-3-TB-E
FPN#2SK3666-3-TB-E-FL
MFRonsemi
Part DescriptionJFET N-Channel 10mA, 200mW, 30V, Surface Mount SMCP, SOT-23-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SK3666 |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | RoHS (2015/863) |
Reach Status | Compliant |
Breakdown Voltage | 30V |
Configuration | N-Channel |
Drain Source Voltage | 30V |
FET Type | Single |
Gate Source Cutoff Voltage | 180mV @ 1µA |
Input Capacitance | 4pF @ 10V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 10mA |
Maximum Drain Gate Voltage | 30V |
Maximum Gate Source Voltage | 30V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 200mW |
Minimum Leakage Current | 1.2mA @ 10V |
Minimum Operating Temperature | N/A |
Package Type | SC-59-3/CP3 |
Resistance | 200 Ohm |
Technology Type | N/A |