
2SK3489-TD-E
MFR #2SK3489-TD-E
FPN#2SK3489-TD-E-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 20V 8A (Ta) Surface Mount, TO-243-4
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SK3489 |
Lifecycle Status | Obsolete |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 460pF |
Input Capacitance Test Voltage | 10V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 8A (Ta) |
Maximum Drain to Source Resistance | 48 mOhm @ 4A, 10V |
Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
Maximum Junction Temperature | 150°C |
Maximum Power Dissipation | 1.5W (Ta), 3.5W (Tc) |
Maximum Pulse Drain Current | 32A |
Maximum Total Gate Charge | 8.5nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | N/A |
Package Type | PCP |
Technology | MOSFET (Metal Oxide) |
Technology Type | SI |
Typical Gate to Drain Charge | 1.3nC |
Typical Gate to Source Charge | 1.8nC |