
2SK3489-TD-E
MFR #2SK3489-TD-E
FPN#2SK3489-TD-E-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 20V 8A (Ta) Surface Mount, TO-243-4
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2SK3489 |
| Lifecycle Status | Obsolete |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 460pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 8A (Ta) |
| Maximum Drain to Source Resistance | 48 mOhm @ 4A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | 150°C |
| Maximum Power Dissipation | 1.5W (Ta), 3.5W (Tc) |
| Maximum Pulse Drain Current | 32A |
| Maximum Total Gate Charge | 8.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Package Type | PCP |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1.3nC |
| Typical Gate to Source Charge | 1.8nC |
