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2SJ661-DL-1E

2SJ661-DL-1E

MFR #2SJ661-DL-1E

FPN#2SJ661-DL-1E-FL

MFRonsemi

Part DescriptionMOSFET P-Channel Single 60V 38A (Ta) TO-263-3
Quote Onlymore info
Multiples of: 800more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SJ661
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4360pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current38A (Ta)
Maximum Drain to Source Resistance39 mOhm @ 19A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C
Maximum Power Dissipation1.65W (Ta), 65W (Tc)
Maximum Pulse Drain Current152A
Maximum Total Gate Charge80nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package TypeTO-263
TechnologyMOSFET (Metal Oxide)
Technology TypeN/A
Typical Gate to Drain Charge12nC
Typical Gate to Source Charge15nC