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2SJ645-TL-E

MFR #2SJ645-TL-E

FPN#2SJ645-TL-E-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 8A (Ta) TO-252-3
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SJ645
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±10V
Input Capacitance680pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current8A (Ta)
Maximum Drain to Source Resistance58 mOhm @ 3A, 4.5V
Maximum Gate to Source Threshold Voltage1.4V @ 1mA
Maximum Junction Temperature150°C
Maximum Power Dissipation1W (Ta), 20W (Tc)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge8.7nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction TemperatureN/A
Package TypeDPAK/TP-FA
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.8nC
Typical Gate to Source Charge1.5nC