(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

2SD1801S-E

MFR #2SD1801S-E

FPN#2SD1801S-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Through Hole, TO-251-3
Datasheet
36276-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SD1801
Packaging TypeBag
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth150MHz
Life Cycle StatusObsolete
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage400mV @ 50mA, 1A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation800mW
Minimum DC Current Gain140 @ 100mA, 2V
Minimum Operating TemperatureN/A
Package TypeTP
Technology TypeN/A
Transistor TypeSingle