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onsemi

2SD1801S-E

MFR #2SD1801S-E

FPN#2SD1801S-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Through Hole, TO-251-3
Datasheet
36276-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SD1801
Packaging TypeBulk
Packaging Quantity500
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth150MHz
Life Cycle StatusObsolete
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage400mV @ 50mA, 1A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation800mW
Minimum DC Current Gain100 @ 100mA, 2V
Minimum Operating TemperatureN/A
Package TypeTP
Technology TypeN/A
Transistor TypeSingle