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2SD1060R-1E
onsemi

2SD1060R-1E

MFR #2SD1060R-1E

FPN#2SD1060R-1E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 50 V 5 A 30MHz 1.75 W Through Hole TO-220-3
Datasheet
36271-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SD1060
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth30MHz
Life Cycle StatusObsolete
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage300mV @ 300mA, 3A
Maximum Cutoff Collector Current100µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.75W
Minimum DC Current Gain100 @ 1A, 2V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle