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onsemi

2SC5706-P-E

MFR #2SC5706-P-E

FPN#2SC5706-P-E-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole, TO-251-3
Datasheet
63264-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SC5706
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Package TypeTP
ConfigurationNPN
Gain Bandwidth400MHz
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage240mV @ 100mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum DC Current Gain560 @ 500mA, 2V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation800mW
Minimum DC Current Gain200 @ 500mA, 2V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle