2SC5706-P-E
MFR #2SC5706-P-E
FPN#2SC5706-P-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole, TO-251-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SC5706 |
Packaging Type | N/A |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Configuration | NPN |
Gain Bandwidth | 400MHz |
Life Cycle Status | Obsolete |
Maximum Collector Current | 5A |
Maximum Collector Emitter Breakdown Voltage | 50V |
Maximum Collector Emitter Saturation Voltage | 240mV @ 100mA, 2A |
Maximum Cutoff Collector Current | 1µA (ICBO) |
Maximum Emitter Base Voltage | 6V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 800mW |
Minimum DC Current Gain | 200 @ 500mA, 2V |
Minimum Operating Temperature | N/A |
Package Type | TP |
Technology Type | SI |
Transistor Options | N/R |
Transistor Type | Single |