(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

2SC5551AF-TD-E

MFR #2SC5551AF-TD-E

FPN#2SC5551AF-TD-E-FL

MFRonsemi

Part DescriptionRF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, TO-243
Datasheet
150564-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SC5551A
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
1dB Compression Point (P1dB)N/A
ConfigurationNPN
GainN/A
Gain Bandwidth3.5GHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage40V
Maximum Collector Current300mA
Maximum Collector Emitter Breakdown Voltage30V
Maximum Emitter Base Voltage2V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.3W
Minimum DC Current Gain90 @ 50mA, 5V
Minimum Junction TemperatureN/A
Noise FigureN/A
Number of Elements1
Output Intercept Point (IP3)N/A
Output PowerN/A
PK Package Dimensions NotePopular package size 49% from Suppliers use this Dimension
Package TypeSOT-89/PCP-1
Technology TypeN/A
Transistor TypeSingle