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onsemi

2SC5551AF-TD-E

MFR #2SC5551AF-TD-E

FPN#2SC5551AF-TD-E-FL

MFRonsemi

Part DescriptionRF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, TO-243
Datasheet
150564-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SC5551A
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
1dB Compression Point (P1dB)N/A
ConfigurationNPN
GainN/A
Gain Bandwidth3.5GHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage40V
Maximum Collector Current300mA
Maximum Collector Emitter Breakdown Voltage30V
Maximum Emitter Base Voltage2V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.3W
Minimum DC Current Gain90 @ 50mA, 5V
Minimum Junction TemperatureN/A
Noise FigureN/A
Number of Elements1
Output Intercept Point (IP3)N/A
Output PowerN/A
PK Package Dimensions NotePopular package size 49% from Suppliers use this Dimension
Package TypeSOT-89/PCP-1
Technology TypeN/A
Transistor TypeSingle